why width of depletion region decrease on increasing level of doping?
Asked by Kunal Bhardwaj | 12th Feb, 2014, 07:53: PM
When we increase the level of doping, the number of free carriers also increase.
Hence, the barrier will be developed in quick time which will oppose the diffusion of charge carriers from type to other type semiconductor.
Therefore, only a small width of the depletion region achieves the arrest of diffusion.
This is the reason why depletion region decreases when we increase the level of doping.
Answered by | 13th Feb, 2014, 11:12: AM
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