CBSE Class 12-science Answered
when to do reverse baising and when to do fprward baising in case of common emitter and common collector?
and why do we connect high voltage cells in reverse baising ang low voltage cell in forward baising?
it is said that in p n junction in reverse baising have thicker depletion region so in zener diode why do we have thin depletion region even though it works under reverse bais
Asked by | 17 Nov, 2015, 09:25: PM
Expert Answer
In reverse bias a voltage is applied across the device such that the electric field at the junction increases. The high electric field in the depletion region decreases the probability that carriers can diffuse from one side of the junction to the other, hence the diffusion current decreases.
As in forward bias, By applying the lower electric field, the number of minority carriers on either side of the p-n junction limits the drift current and is relatively unchanged by the increased electric field. A small increase in the drift current is experienced due to the small increase in the width of the depletion region.
Note: Kindly ask other question as a separate separate queries.
Answered by Priyanka Kumbhar | 18 Nov, 2015, 01:01: PM
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